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1 m e m o r y all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301 - www.maxwell.com 8 megabit (256k x 32-bit) low voltage eeprom mcm 79lv0832 ?2005 maxwell technologies all rights reserved. 01.10.05 rev 8 f eatures : ? 256k x 32-bit eeprom mcm r ad -p ak ? radiation-hardened against natural space radiation total dose hardness: - >100 krad (si) - dependent upon orbit excellent single event effects - sel th > 84.7 mev/mg/cm 2 - seu > 26.6 mev/mg/cm 2 read mode - seu = 11.4 mev/mg/cm 2 write mode high endurance - 10,000 cycles/dword, 10 year data retention page write mode: 2 x 128 dword page high speed: - 200 and 250 ns maximum access times automatic programming - 15 ms automatic page/dword write d escription : maxwell technologies? 79lv0832 multi-chip module (mcm) memory features a greater than 100 krad (si) total dose toler- ance, dependent upon orbit. using maxwell technologies? pat- ented radiation-hardened r ad -p ak ? mcm packaging technology, the 79lv0832 is the first radiation-hardened 8 megabit mcm eeprom for space application. the 79lv0832 uses eight 1 megabit high speed cmos die to yield an 8 megabit product. the 79lv0832 is capable of in-system elec- trical dword and page programmability. it has a 128 x 32 byte page programming function to make its erase and write opera- tions faster. it also features data polling and a ready/busy signal to indicate the completion of erase and programming operations. in the 79lv0832, hardware data protection is pro- vided with the res pin. software data protection is imple- mented using the jedec standard algorithm. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. in a geo orbit, r ad -p ak ?? provides greater than 100 krad (si) radiation dose tolerance. this product is available with screening up to maxwell technologies self-defined class k.
m e m o r y 2 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 t able 1. 79lv0832 p inout d escription p in s ymbol d escription 84-77, 29-37 addr0 to addr16 address input 48-55, 66-73, 96, 1-7, 18-25 i/o0 to i/o31 data input/output 61 oe output enable 41, 43 ce0-1 chip enable 0 through 1 45 we write enable 10, 17, 28, 40, 44, 58, 65, 76, 87, 93 3.3v power supply 8, 9, 11-16, 26, 27, 38, 42, 46, 56, 57, 59, 60, 62-64, 74, 75, 85, 86, 88-92, 94, 95 gnd ground 39 rdy/busy ready/busy 47 res reset
m e m o r y 3 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 t able 2. 79lv0832 a bsolute m aximum r atings p arameter s ymbol m in typ m ax u nit supply voltage v cc -0.6 7.0 v input voltage v in -0.5 1 1. v in min = -3.0v for pulse width < 50ns. 7.0 v package weight rp 45 grams rt 38 thermal impedance (rp and rt packages; xp tbd) f jc 3 c/w operating temperature range t opr -55 125 c storage temperature range t stg -65 150 c t able 3. 79lv0832 r ecommended dc o perating c onditions p arameter s ymbol m in m ax u nit supply voltage v cc 3.0 3.6 v input voltage res _pin v il v ih v h -0.3 1 2.2 v cc -0.5 1. v il min = -1.0v for pulse width < 50 ns 0.8 v cc +0.3 v cc +1 v v v operating temperature range t opr -55 125 c t able 4. d elta l imits 1 1. delta limits are calculated from test data taken at preburn-in and post burn-in as defined in mil-std-883 p arameter v ariation 2 2. specified value in table 6 i cc1a +/- 10 % i cc2a +/- 10 % i cc2c +/- 10 % i li - addr, ce , oe , we +/- 10 % i lo - d0 - d31 +/- 10 %
m e m o r y 4 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 t able 5. 79lv0832 c apacitance (t a = 25 c, f = 1 mhz) p arameter s ymbol m in m ax u nit input capacitance: v in = 0v 1 c in -- 6 pf c in oe -- 6 c in we -- 6 c in ce 0-1 -- 6 c in a0-a16 -- 6 c in res -- 48 output capacitance: v out = 0v 1 c out rdy/bsy -- 6 pf c o ut d0-d31 -- 12 1. guaranteed by design. t able 6. 79lv0832 dc e lectrical c haracteristics (v cc = 3.3v 10%, t a = -55 to +125c) p arameter t est c ondition s ymbol s ubgroups m in m ax u nits input leakage current 1 a0-a16, ce ,we , oe v in = v cc i li 1, 2, 3 -- 4 2 a v in =v ih 720 2 a v in =0v 720 2 a input leakage current d0-d31 v in =v cc i li 1, 2, 3 4 a output leakage current (v cc = 3.6v, v out = 3.6v/0.4v) i lo 1, 2, 3 -- 4 a standby v cc current 1 ce = addr=we =oe =v cc i cc1a 1, 2, 3 -- 80 a ce = addr=we =oe =v ih i cc1b -- 15 ma ce = v ih ; addr=we =oe =0v i cc1c -- 15 ma operating v cc current 1,3 oe = 0v; addr=we =v cc i out = 0ma, ce duty = 100%, cycle = 1 us at v cc = 3.6v i cc2a 1, 2, 3 24 ma oe =addr=we =0v i out = 0ma, ce duty = 100%, cycle = 1 us at v cc = 3.6v i cc2b 1, 2, 3 -- 40 ma oe = 0v; addr=we =v cc i out = 0ma, ce duty = 100%, cycle = 200 ns at v cc =3.6v i cc2c 1, 2, 3 60 ma oe =addr=we =0v i out = 0ma, ce duty = 100%, cycle = 200 ns at v cc = 3.6v i cc2d 1, 2, 3 -- 100 ma input voltage res _pin v il v ih v h 1, 2, 3 2.2 v cc -0.5 0.8 v
m e m o r y 5 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 output voltage data lines: v cc min, i ol = 2.1ma rdy/bsy_line: v cc min, i ol = 12ma data lines: v cc min, i oh = -400 a rdy/bsy_line: v cc min, i oh = -12ma all outputs: v cc min, i oh =-100ua v ol v ol v oh v oh 1, 2, 3 -- 2.4 2.4 v cc -0.3v 0.4 0.4 -- -- v v v v v 1. all inputs are tied to vcc with a 5.5k w resistor, except for res which is 30 k w . 2. for res i li =800ua max. 3. only one ce active (low) at a time t able 7. 79lv0832 ac e lectrical c haracteristics for r ead o peration 1 (v cc = 3.3v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in m ax u nit address access time ce = oe = v il , we = v ih -200 -250 t acc 9, 10, 11 -- -- 200 250 ns chip enable access time oe = v il , we = v ih -200 -250 t ce 9, 10, 11 -- -- 200 250 ns output enable access time ce = v il , we = v ih -200 -250 t oe 9, 10, 11 0 0 110 120 ns output hold to address change ce = oe =v il , we = v ih -200 -250 t oh 9, 10, 11 0 0 -- -- ns output disable to high-z 2 ce = v il , we = v ih -200 -250 ce = oe = v il , we = v ih -200 -250 t df t dfr 9, 10, 11 0 0 0 0 50 50 300 350 ns ns res to output delay ce = oe = v il , we = v ih 3 -200 -250 t rr 9, 10, 11 0 0 525 550 ns 1. test conditions: input pulse levels = 0.4v to 2.2v; input rise and fall times < 20 ns; output load = 1 ttl gate + 100 pf (including scope and jig); reference levels for measuring timing = 0.8 v/1.8 v. 2. t df and t dfr are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. guaranteed by design. t able 6. 79lv0832 dc e lectrical c haracteristics (v cc = 3.3v 10%, t a = -55 to +125c) p arameter t est c ondition s ymbol s ubgroups m in m ax u nits
m e m o r y 6 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 t able 8. 79lv0832 ac e lectrical c haracteristics p age /d word e rase and p age /d word w rite o peration (v cc = 3.3v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nits address setup time -200 -250 t as 9, 10, 11 0 0 -- -- ns chip enable to write setup time (we controlled) -200 -250 t cs 9, 10, 11 0 0 -- -- ns write pulse width ce controlled -200 -250 we controlled -200 -250 t cw t wp 9, 10, 11 200 250 200 250 -- -- -- -- ns ns address hold time -200 -250 t ah 9, 10, 11 200 250 -- -- ns data setup time -200 -250 t ds 9, 10, 11 150 200 -- -- ns data hold time -200 -250 t dh 9, 10, 11 10 10 -- -- ns chip enable hold time (we controlled) -200 -250 t ch 9, 10, 11 0 0 -- -- ns write enable to write setup time (ce controlled) -200 -250 t ws 9, 10, 11 0 0 -- -- ns write enable hold time (ce controlled) -200 -250 t wh 9, 10, 11 0 0 -- -- ns output enable to write setup time -200 -250 t oes 9, 10, 11 0 0 -- -- ns output enable hold time -200 -250 t oeh 9, 10, 11 0 0 -- -- ns write cycle time 2 -200 -250 t wc 9, 10, 11 -- -- 15 15 ms
m e m o r y 7 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 data latch time -200 -250 t dl 9, 10, 11 700 750 -- -- ns byte load window -200 -250 t bl 9, 10, 11 100 200 -- -- s byte load cycle -200 -250 t blc 9, 10, 11 1 1 30 30 s time to device busy -200 -250 t db 9, 10, 11 100 120 -- -- ns write start time 3 -200 -250 t dw 9, 10, 11 250 250 -- -- ns res to write setup time 4 -200 -250 t rp 9, 10, 11 100 100 -- -- s v cc to res setup time 4 -200 -250 t res 9, 10, 11 1 1 -- -- s 1. use this device in a longer cycle than this value. 2. t wc must be longer than this value unless polling techniques or rdy/busy are used. this device automatically completes the internal write operation within this value. 3. next read or write operation can be initiated after t dw if polling techniques or rdy/busy are used. 4. guaranteed by desgin. t able 8. 79lv0832 ac e lectrical c haracteristics p age /d word e rase and p age /d word w rite o peration (v cc = 3.3v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nits
m e m o r y 8 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 t able 9. 79lv0832 m ode s election 1, 2 p arameter ce 3 oe we i/o res rdy/busy read v il v il v ih d out v h v oh standby v ih x x high-z x v oh write v il v ih v il d in v h v oh --> v ol deselect v il v ih v ih high-z v h v oh write inhibit x x v ih -- x -- xv il x--x-- data polling v il v il v ih data out (i/o7) v h v ol program reset x x x high-z v il v oh 1. x = don?t care. 2. refer to the recommended dc operating conditions. 3. for ce 0-1 only one ce can be enabled (low) at a time.
m e m o r y 9 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 f igure 1. r ead t iming w aveform f igure 2. d word w rite t iming w aveform (1) (we c ontrolled ) high
m e m o r y 10 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 f igure 3. d word w rite t iming w aveform (2) (ce c ontrolled ) f igure 4. p age w rite t iming w aveform (1) (we c ontrolled )
m e m o r y 11 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) 1,2 f igure 6. d ata p olling t iming w aveform 1 1) a7-a16 are p age a ddresses and must be the same within a p age w rite o peration 2) r efer to t able 7 and 8 for timing characteristics i/o7, 15, 23, 31 1) r efer to t able 7 and 8 for timing charactoristics
m e m o r y 12 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 f igure 7. s oftware d ata p rotection t iming w aveform (1) ( in protection mode ) 1 f igure 8. s oftware d ata p rotection w aveform (2) ( in non - protection mode ) 1 eeprom a pplication n otes this application note describes the programming procedures for the eeprom modules and with details of various techniques to preserve data integrity. automatic page write page-mode write feature allows 1 to 128 dwords of data to be written into the eeprom in a single write cycle. loading the first dword of data, the data load window opens 30 s for the second dword. in the same manner each additional dword of data can be loaded within 30 s of the preceding falling edge of either we or ce . when ce and we are kept 1)r epeat the data pattern in each of the four bytes . 1) r epeat the data pattern in each of the four bytes .
m e m o r y 13 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 high for 100 s after data input, the eeprom enters the write mode automatically and the data input is written into the eeprom. we , ce pin operation during a write cycle, addresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce . data polling data polling function allows the status of the eeprom to be determined. if eeprom is set to read mode during a write cycle, an inversion of the last dword of data to be loaded outputs from i/o 7, 15, 23, 31 to indicate that the eeprom is performing a write operation. rdy/busy signal rdy/busy signal also allows a comparison operation to determine the status of the eeprom. the rdy/busy signal goes low (v ol) after the first write signal. at the end of the write cycle, the rdy/busy returns to a high state ( v oh ). res signal when res is low (v l ), the eeprom cannot be read or programmed. the eeprom data must be protected by keeping res low when v cc is power on and off. res should be high (v h ) during read and programming operations. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection at v cc on/off when v cc is turned on or off, noise on the control pins generated by external circuits, such as cpus, may turn the eeprom to programming mode by mistake. to prevent this unintentional programming, the eeprom must be kept in an unprogrammable state during v cc on/off by using a cpu reset signal to res pin.
m e m o r y 14 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation. during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mis- take. to prevent this phenomenon, the eeprom has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. be careful not to allow noise of a width of more than 20ns on the control pins. 2. res signal res should be kept at v ss level when v cc is turned on or off. the eeprom breaks off programming operation when res become low, programming operation doesn?t finish correctly in case that res falls low during programming operation. res should be kept high for 10 ms after the last data is input
m e m o r y 15 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 . 3. software data protection enable the 79lv0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to th e device. this is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. software data protection is enabled by writing the following data sequence to the eeprom and allowing the write cycle period (t wc ) of 10ms to elapse: . software data protection enable sequence 4. writing to the memory with software data protection enabled to write to the device once software protection is enabled, the enable sequence must precede the data to be written. this sequence allows the write to occur while at the same time keeping the software protection enabled sequence for writing data with software protection enabled . 15ms address 5555 aaaa or 2aaa 5555 data aa aa aa aa 55 55 55 55 a0 a0 a0 a0 address 5555 aaaa or 2aaa 5555 data aa aa aa aa 55 55 55 55 a0 a0 a0 a0 write address(s) normal data input
m e m o r y 16 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 5. disabling software protection software data protection mode can be disabled by inputting the following data sequence. once the software pro- tection sequence has been written, no data can be written to the memory until the write cycle (t wc ) has elapsed. software protection disable sequence devices are shipped in the ?unprotected? state, meaning that the contents of the memory can be changed as required by the user. after the software data protection is enabled, the device enters the protect mode where no further write commands have any effect on the memory contents. address 5555 aaaa or 2aaa 5555 data aaaa or 2aaa 55 55 55 55 20 20 20 20 5555 aa aa aa aa 80 80 80 80 55 55 55 55 aa aa aa aa 5555
m e m o r y 17 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 note: all dimensions in inches 96-p in r ad -p ak ? q uad f lat p ackage s ymbol d imension m in n om m ax a .184 .200 .216 b .010 .012 .013 c --- .009 .012 d 1.408 1.420 1.432 d1 1.162 e .050 s1 .129 l --- 2.528 2.543 l1 2.485 2.500 2.505 l2 --- 1.700 a1 .152 .165 .178 n96
m e m o r y 18 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 96 p in r ad -t olerant q uad f lat p ackage note: all dimensions in inches s ymbol d imension m in n om m ax a .167 .183 .199 b .010 .012 .013 c -- .009 .012 d 1.408 1.420 1.432 d1 1.162 e .050 s1 .129 l -- 2.528 2.543 l1 2.485 2.500 2.505 l2 -- 1.700 -- a1 .152 .165 .178 n96 a a1 c l1(sq) l(sq) d(sq) d1 l2 pin #1 id s1 maxwell technologies b e
m e m o r y 19 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 96 p in x ray l q uad f lat p ackage note: all dimensions in inches s ymbol d imension m in n om m ax a .200 .222 .245 b .007 .010 .013 c .009 .009 .012 d 1.690 1.707 1.725 d1 1.150 e 0.050 s1 .278 l 3.000 3.020 3.040 l1 2.985 3.000 3.005 l2 2.090 2.200 2.210 a1 .115 .130 .145 n96
m e m o r y 20 01.10.05 rev 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved low voltage 8 megabit (256k x 32-bit) eeprom mcm 79lv0832 important notice: these data sheets are created using the chip manufacturers published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the use of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.

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